2N7002WT1G
Manufacturer:
On Semiconductor
Mfr.Part #:
2N7002WT1G
Datasheet:
Description:
MOSFETs SOT-323-3 SMD/SMT N-Channel number of channels:1 200 mW 60 V Continuous Drain Current (ID):115 mA
| Parameter | Value |
|---|---|
| Length | 2.2 mm |
| Width | 1.35 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 1.6 Ω |
| Height | 900 µm |
| Packaging | Reel |
| Halogen Free | Halogen Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Max Power Dissipation | 330 mW |
| Power Dissipation | 200 mW |
| Threshold Voltage | 1 V |
| Number of Channels | 1 |
| Input capacitance | 24.5 pF |
| Continuous Drain Current (ID) | 115 mA |
| Rds On Max | 1.6 Ω |
| Drain to Source Voltage (Vdss) | 60 V |
| Turn-On Delay Time | 5.85 ns |
| Turn-Off Delay Time | 12.5 ns |
| Element Configuration | Single |
| Fall Time | 9 ns |
| Rise Time | 9 ns |
| Drain to Source Resistance | 1.6 Ω |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 1 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 2027
Distributors
pcbx
pcbxUnit Price$0.06720
Ext.Price$0.06720
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.06720 | $0.06720 |
| 10 | $0.03360 | $0.33600 |
| 50 | $0.03005 | $1.50250 |
| 100 | $0.02687 | $2.68700 |
| 500 | $0.02403 | $12.01500 |
| 1000 | $0.02149 | $21.49000 |
| 3000 | $0.01921 | $57.63000 |
| 5000 | $0.01762 | $88.10000 |
| 10000 | $0.01617 | $161.70000 |